Innoscience

Join us at electronica on November 15th at 10:40 for Dr. Denis Marcon’s talk at the Power Electronics Forum: “Enabling Smaller, More Efficient and Cheaper Power Converter Systems with Price-Competitive GaN Power Devices.” Learn how Innoscience’s InnoGaN™ discrete and SolidGaN™ integrated GaN devices (30V-700V) are making power converters smaller, more efficient, and more affordable. This presentation will show how to enhance AC-DC and DC-DC converters by improving performance and simplifying design. Find more event information here: https://lnkd.in/d9c93fq3

Our INN100W135A-Q and smaller package INN100W800A-Q are both certified to AEC-Q101 and optimized for LiDAR, high power density DC-DC converters, and Class D audio applications in advanced driver assistance systems. These devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of 200/300m, essential for advanced driver assistance and autonomous driving applications. Read more here: https://lnkd.in/eUNigWtn

Our GaN technology has the advantage over traditional Silicon technology of smaller parasitic capacitance, faster switching speed and smaller on-resistance per unit area. When applied to wireless charging system, our GaN technology reduces both the switching and conduction loss, thus enabling wireless charging system with higher system efficiency and longer transmission distance. Click here to learn more: https://lnkd.in/eYwzp6Ua

Our 240W All GaN AC/DC converter uses InnoGaN at both the primary and secondary stages. Alongside a Totem Pole PFC, this driver delivers 2% more efficiency with a 350% higher power density compared to traditional Silicon solutions. Achieve 38W/in³ power density with GaN compared to Silicon's 11W/in³.

Check out our presentation at IEEE-PEMC this year, titled “48V Application Switching: A New El Dorado for GaN.” The presentation focuses on the growing market, value propositions, and innovative opportunities for 48V-12V DC/DC applications in data centers.

In LIDAR systems, the resolution and measurement distance are determined by the system's laser driver. InnoGaN transistors are leading the way in Time-of-Flight (ToF) applications, simultaneously delivering higher current for longer measurement distances and narrower pulse width for enhanced resolution. Compared to traditional Silicon technology, our GaN Technology offers better performance in a smaller footprint making it a better choice for ToF systems. Find out more here: https://lnkd.in/eYwzp6Ua

At the recent PowerUp Conference & Expo in Milan, Dr. Denis Marcon presented how "Price competitive and highly reliable GaN power devices make them a no-brainer for today’s power system solutions." Highlighting the growing adoption of GaN technology across industries, from chargers to data centers, driven by the advantages of smaller system sizes, higher efficiency, and reduced costs. 

Our new generation of battery management system (BMS) solutions, based on VGaN technology, meets the growing demand for convenient eco-friendly travel, mobile energy storage, and small power solutions. The 48V/180A BMS demo supports a high-side same-port BMS application. This design incorporates our latest 100V VGaN product, the INV100FQ030A, packaged in a 4mm x 6mm FCQFN and offering a maximum on-resistance of 3.2mΩ. No heat sink is required, with a maximum temperature rise of less than 50°C. The 16-string charging and discharging battery protection system uses the controllable bidirectional conduction and cut-off features of VGaN, enabling four operational states: normal charging and discharging, charging protection, discharging protection, and sleep mode. Click here to find out more: https://lnkd.in/e3riZ8VM

Our 48V to 4.8V DC-DC 1MHz Power Modules! Our SolidGaN solution delivers 1kW of power with a 70% reduction in size compared to a 600W Silicon solution. At just 30mm x 50mm x 8mm, the SolidGaN module is compact while achieving peak efficiency of 98.5%, outperforming the 97.9% efficiency of traditional Silicon solutions. Find out more here: https://lnkd.in/e3PCEQef

It's happening today! Join Dr. Denis Marcon at 6:15 PM CEST during the PowerUP Virtual Event for his presentation; ‘Price competitive and highly reliable GaN power devices.’ Discover how Gallium Nitride (GaN) power devices are the next-generation technology, outperforming standard Silicon (Si) in both AC-DC and DC-DC applications. Click here to watch the presentation: https://lnkd.in/dUJUWFM