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ORCIDAndreas Graff
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2020 – today
- 2021
[c4]Maximilian Dammann, Martina Baeumler, Tobias Kemmer, Helmer Konstanzer, Peter Brückner, Sebastian Krause
, Andreas Graff, Michél Simon-Najasek:
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. IRPS 2021: 1-7- 2020
- [c3]Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Fabiana Rampazzo, Daniele Marcon, Veronica Gao Zhan, Francesca Chiocchetta, Andreas Graff, Frank Altmann, Michél Simon-Najasek, David Poppitz:
Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. IRPS 2020: 1-10
2010 – 2019
- 2018
- [j7]Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay:
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectron. Reliab. 88-90: 385-388 (2018) - [c2]Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann:
Physical failure analysis methods for wide band gap semiconductor devices. IRPS 2018: 3 - [c1]C. Monachon, Marcin Stefan Zielinski, J. Berney, D. Poppitz, Andreas Graff, Steffen Breuer, Lutz Kirste:
Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices. IRPS 2018: 6 - 2017
- [j6]Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek:
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. Microelectron. Reliab. 76-77: 292-297 (2017) - [j5]Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck:
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. Microelectron. Reliab. 76-77: 338-343 (2017) - 2016
- [j4]Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck:
Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectron. Reliab. 64: 541-546 (2016) - 2015
- [j3]Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle:
Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectron. Reliab. 55(9-10): 1667-1671 (2015) - 2014
- [j2]Michél Simon-Najasek, Susanne Hübner, Frank Altmann, Andreas Graff:
Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures. Microelectron. Reliab. 54(9-10): 1785-1789 (2014) - [j1]Benjamin März, Andreas Graff, Robert Klengel, Matthias Petzold:
Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials. Microelectron. Reliab. 54(9-10): 2000-2005 (2014)
Coauthor Index
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