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Takashi Ando
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2020 – today
- 2024
- [c8]Ernest Y. Wu, Takashi Ando, Paul Jamison:
General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic Competition. IRPS 2024: 1-8 - 2022
- [c7]Franco Stellari, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song:
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation. ESSDERC 2022: 293-296 - 2020
- [c6]Takashi Ando, Tomoya Kitani:
A Time Alignment Method for Multiple Sensing Systems with GNSS Timing and IMUs with Frame-Sync Input. PerCom Workshops 2020: 1-6
2010 – 2019
- 2019
- [c5]Eduard A. Cartier, Wanki Kim, Nanbo Gong, Tayfun Gokmen, Martin M. Frank, Douglas M. Bishop, Youngseok Kim, Seyoung Kim, Takashi Ando, Ernest Y. Wu, Praneet Adusumilli, John Rozen, Paul M. Solomon, Wilfried Haensch, Matthew J. BrightSky, Abu Sebastian, Geoffrey W. Burr, Vijay Narayanan:
Reliability Challenges with Materials for Analog Computing. IRPS 2019: 1-10 - [i1]Hyungjun Kim, Malte J. Rasch, Tayfun Gokmen, Takashi Ando, Hiroyuki Miyazoe, Jae-Joon Kim, John Rozen, Seyoung Kim:
Zero-shifting Technique for Deep Neural Network Training on Resistive Cross-point Arrays. CoRR abs/1907.10228 (2019) - 2018
- [j1]Kiichi Niitsu, Atsuki Kobayashi, Yuya Nishio, Kenya Hayashi, Kei Ikeda, Takashi Ando, Yudai Ogawa, Hiroyuki Kai, Matsuhiko Nishizawa, Kazuo Nakazato:
A Self-Powered Supply-Sensing Biosensor Platform Using Bio Fuel Cell and Low-Voltage, Low-Cost CMOS Supply-Controlled Ring Oscillator With Inductive-Coupling Transmitter for Healthcare IoT. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(9): 2784-2796 (2018) - [c4]Eduard Cartier, Martin M. Frank, Takashi Ando, John Rozen, Vijay Narayanan:
PBTI in InGaAs MOS capacitors with Al2O3/HfO2/TiN gate stacks: Interface-state generation. IRPS 2018: 5 - 2017
- [c3]ChoongHyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan:
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS. ASICON 2017: 573-576 - [c2]Eduard Cartier, Atreya Majumdar, K.-T. Lee, Takashi Ando, Martin M. Frank, John Rozen, Keith A. Jenkins, C. Liang, C.-W. Cheng, John Bruley, M. Hopstaken, Pranita Kerber, J.-B. Yau, X. Sun, Renee T. Mo, Chun-Chen Yeh, Effendi Leobandung, Vijay Narayanan:
Electron mobility in thin In0.53Ga0.47As channel. ESSDERC 2017: 292-295 - 2015
- [c1]Pouya Hashemi, Takashi Ando, Karthik Balakrishnan, John Bruley, Sebastian U. Engelmann, John A. Ott, Vijay Narayanan, D.-G. Park, Renee T. Mo, Effendi Leobandung:
High-mobility high-Ge-content Si1-xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width. VLSIC 2015: 16-
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last updated on 2024-10-07 21:22 CEST by the dblp team
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