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2020 – today
- 2024
[c90]Erik Jan Marinissen, Harish Dattatraya Dixit, Ronald Shawn Blanton, Aaron Kuo, Wei Li, Subhasish Mitra, Chris Nigh, Ruben Purdy, Ben Kaczer, Dishant Sangani, Pieter Weckx, Philippe J. Roussel, Georges G. E. Gielen:
Silent Data Corruption: Test or Reliability Problem? ETS 2024: 1-7- [c89]Yuanyang Guo, Robin Degraeve, Philippe Roussel, Ben Kaczer, Erik Bury, Ingrid Verbauwhede:
Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. ICANN (10) 2024: 156-167 - [c88]Y. Guo, Robin Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
:
Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS 2024: 1-7 - [c87]Pietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco:
Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. IRPS 2024: 1-6 - [c86]Dishant Sangani, Ben Kaczer, Pieter Weckx, Philippe J. Roussel, Subrat Mishra, Erik Jan Marinissen, Georges G. E. Gielen:
Possible Origins, Identification, and Screening of Silent Data Corruption in Data Centers. IRPS 2024: 1-7 - [c85]Ying Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco:
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. IRPS 2024: 1-7 - [c84]Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer:
Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS 2024: 4 - [c83]Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer:
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays. IRPS 2024: 8 - [i1]Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt:
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR abs/2404.13138 (2024) - 2023
- [j22]James Brown, Kean Hong Tok, Rui Gao, Zhigang Ji, Weidong Zhang, John S. Marsland, Thomas Chiarella, Jacopo Franco, Ben Kaczer, Dimitri Linten, Jianfu Zhang:
A Pragmatic Model to Predict Future Device Aging. IEEE Access 11: 127725-127736 (2023) - [c82]Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer:
Reliability challenges in Forksheet Devices: (Invited Paper). IRPS 2023: 1-8 - [c81]Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer:
Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS 2023: 1-9 - [c80]L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev:
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS 2023: 1-6 - [c79]Dishant Sangani, Javier Diaz-Fortuny, Erik Bury, Ben Kaczer, Georges G. E. Gielen:
The Role of Mobility Degradation in the BTI-Induced RO Aging in a 28-nm Bulk CMOS Technology: (Student paper). IRPS 2023: 1-6 - [c78]Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer:
Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS 2023: 1-6 - [c77]Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken:
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS 2023: 1-10 - [c76]Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf:
Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS 2023: 1-7 - [c75]Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, S. Brus, Romain Ritzenthaler, E. Dentoni Litta, Kris Croes, Ben Kaczer, N. Horiguchi:
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c74]L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer:
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. DRC 2022: 1-2 - [c73]Nicolo Ronchi, Lars-Åke Ragnarsson, Umberto Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, Geert Van den Bosch, Jan Van Houdt:
A comprehensive variability study of doped HfO2 FeFET for memory applications. IMW 2022: 1-4 - [c72]J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6 - [c71]Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve:
A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS 2022: 1-7 - [c70]Barry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Md Nur K. Alam, Jan Van Houdt:
Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. IRPS 2022: 4 - [c69]Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten:
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. IRPS 2022: 5 - [c68]Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer:
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS 2022: 6 - [c67]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken:
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS 2022: 6 - [c66]Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu:
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS 2022: 10 - [c65]Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf:
Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS 2022: 10 - [c64]Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer:
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS 2022: 11 - [c63]Brecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, Mischa Thesberg, Philippe Roussel, Adrian Vaisman Chasin, Geert Van den Bosch, Ben Kaczer, Jan Van Houdt:
Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. IRPS 2022: 12-1 - [c62]Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt:
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits 2022: 340-342 - 2021
- [c61]Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT 2021: 1-4 - [c60]Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl:
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS 2021: 1-6 - [c59]Gerhard Rzepa, Markus Karner, Oskar Baumgartner, Georg Strof, Franz Schanovsky, Ferdinand Mitterbauer, Christian Kernstock, Hui-Wen Karner, Pieter Weckx, Geert Hellings, Dieter Claes, Zhicheng Wu, Yang Xiang, Thomas Chiarella, Bertrand Parvais, Jérôme Mitard, Jacopo Franco, Ben Kaczer, Dimitri Linten, Zlatan Stanojevic:
Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies. IRPS 2021: 1-6 - [c58]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken:
The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS 2021: 1-7 - [c57]Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer:
Physics-based device aging modelling framework for accurate circuit reliability assessment. IRPS 2021: 1-6 - [c56]Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer:
A BSIM-Based Predictive Hot-Carrier Aging Compact Model. IRPS 2021: 1-9 - 2020
- [c55]Adrian Vaisman Chasin, Jacopo Franco, Erik Bury, Romain Ritzenthaler, Eugenio Dentoni Litta, Alessio Spessot, Naoto Horiguchi, Dimitri Linten, Ben Kaczer:
Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. IRPS 2020: 1-6 - [c54]Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl:
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS 2020: 1-6 - [c53]Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu:
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS 2020: 1-6 - [c52]Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. IRPS 2020: 1-5 - [c51]Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl:
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS 2020: 1-6 - [c50]Subrat Mishra, Pieter Weckx, Ji-Yung Lin, Ben Kaczer, Dimitri Linten, Alessio Spessot, Francky Catthoor:
Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). IRPS 2020: 1-5 - [c49]Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert:
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS 2020: 1-8 - [c48]Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer:
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS 2020: 1-7 - [c47]Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer:
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [j21]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede:
A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits 54(10): 2765-2776 (2019) - [j20]Marko Simicic, Pieter Weckx, Bertrand Parvais, Philippe Roussel, Ben Kaczer, Georges G. E. Gielen:
Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. IEEE Trans. Very Large Scale Integr. Syst. 27(3): 601-610 (2019) - [c46]Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser:
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC 2019: 262-265 - [c45]Erik Bury, Adrian Vaisman Chasin, Michiel Vandemaele, Simon Van Beek, Jacopo Franco, Ben Kaczer, Dimitri Linten:
Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. IRPS 2019: 1-6 - [c44]Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi:
CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS 2019: 1-7 - [c43]Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt:
New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS 2019: 1-7 - [c42]Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov:
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS 2019: 1-7 - [c41]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - [c40]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken:
Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS 2019: 1-7 - [c39]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - 2018
- [j19]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser:
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [j18]Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser:
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [c38]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede:
A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC 2018: 157-160 - [c37]Erik Bury, Ben Kaczer, Simon Van Beek, Dimitri Linten:
Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations. ESSDERC 2018: 186-189 - [c36]Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten:
Self-heating-aware CMOS reliability characterization using degradation maps. IRPS 2018: 2 - [c35]Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS 2018: 2-1 - [c34]Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - [c33]Jacopo Franco, Ben Kaczer, Adrian Vaisman Chasin, Erik Bury, Dimitri Linten:
Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. IRPS 2018: 5 - [c32]Vamsi Putcha, Jacopo Franco, Abhitosh Vais, Ben Kaczer, S. Sioncke, Dimitri Linten, Guido Groeseneken:
Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps. IRPS 2018: 5 - [c31]Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt:
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS 2018: 6 - 2016
- [c30]Ahmet Unutulmaz, Domenik Helms, Reef Eilers, Malte Metzdorf, Ben Kaczer, Wolfgang Nebel:
Analysis of NBTI effects on high frequency digital circuits. DATE 2016: 223-228 - [c29]Francesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan:
Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterization. ESSDERC 2016: 252-255 - [c28]Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser:
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC 2016: 428-431 - [c27]Dimitrios Stamoulis, Simone Corbetta, Dimitrios Rodopoulos, Pieter Weckx, Peter Debacker, Brett H. Meyer, Ben Kaczer, Praveen Raghavan, Dimitrios Soudris, Francky Catthoor, Zeljko Zilic:
Capturing True Workload Dependency of BTI-induced Degradation in CPU Components. ACM Great Lakes Symposium on VLSI 2016: 373-376 - 2015
- [j17]Halil Kükner, Pieter Weckx, Sébastien Morrison, Jacopo Franco, Maria Toledano-Luque, Moonju Cho, Praveen Raghavan, Ben Kaczer, Doyoung Jang, Kenichi Miyaguchi, Marie Garcia Bardon, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes. Microprocess. Microsystems 39(8): 1039-1051 (2015) - [c26]Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken:
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC 2015: 1-8 - [c25]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c24]Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov:
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC 2015: 226-229 - [c23]Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov:
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC 2015: 238-241 - [c22]Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4 - [c21]Azusa Oshima, Pieter Weckx, Ben Kaczer, Kazutoshi Kobayashi, Takashi Matsumoto:
Impact of random telegraph noise on ring oscillators evaluated by circuit-level simulations. ICICDT 2015: 1-4 - [c20]Pieter Weckx, Ben Kaczer, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken:
Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology. ICICDT 2015: 1-4 - [c19]Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken:
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS 2015: 2 - [c18]Ankush Chaudhary, Ben Kaczer, Philippe J. Roussel, Thomas Chiarella, Naoto Horiguchi, Souvik Mahapatra:
Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI. IRPS 2015: 3 - [c17]Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken:
ESD characterization of planar InGaAs devices. IRPS 2015: 3 - [c16]Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean:
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS 2015: 3 - [c15]Pieter Weckx, Ben Kaczer, C. Chen, Jacopo Franco, Erik Bury, K. Chanda, J. Watt, Philippe J. Roussel, Francky Catthoor, Guido Groeseneken:
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology. IRPS 2015: 3 - [c14]Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer:
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS 2015: 5 - [c13]Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser:
Characterization and modeling of reliability issues in nanoscale devices. ISCAS 2015: 2445-2448 - 2014
- [j16]Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken:
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54(9-10): 2329-2333 (2014) - [j15]Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth:
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. Microelectron. Reliab. 54(11): 2364-2370 (2014) - [j14]Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken:
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22(2): 280-285 (2014) - [c12]Seyab Khan, Innocent Agbo, Said Hamdioui, Halil Kukner, Ben Kaczer, Praveen Raghavan, Francky Catthoor:
Bias Temperature Instability analysis of FinFET based SRAM cells. DATE 2014: 1-6 - [c11]Halil Kukner, Pieter Weckx, Sebastien Morrison, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
NBTI Aging on 32-Bit Adders in the Downscaling Planar FET Technology Nodes. DSD 2014: 98-107 - [c10]Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer:
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. ESSDERC 2014: 365-368 - [c9]Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer:
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4 - [c8]Halil Kukner, Moustafa A. Khatib, Sebastien Morrison, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology. ISQED 2014: 473-479 - [c7]Petr Pfeifer, Zdenek Plíva, Pieter Weckx, Ben Kaczer:
On reliability enhancement using adaptive core voltage scaling and variations on nanoscale FPGAs. LATW 2014: 1-4 - 2013
- [j13]Halil Kükner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Impact of duty factor, stress stimuli, gate and drive strength on gate delay degradation with an atomistic trap-based BTI model. Microprocess. Microsystems 37(8-A): 792-800 (2013) - 2012
- [j12]Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken:
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52(9-10): 1883-1890 (2012) - [j11]Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken:
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52(9-10): 1932-1935 (2012) - [j10]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling. IEEE Trans. Very Large Scale Integr. Syst. 20(8): 1487-1495 (2012) - [c6]Halil Kukner, Pieter Weckx, Praveen Raghavan, Ben Kaczer, Francky Catthoor, Liesbet Van der Perre, Rudy Lauwereins, Guido Groeseneken:
Impact of Duty Factor, Stress Stimuli, and Gate Drive Strength on Gate Delay Degradation with an Atomistic Trap-Based BTI Model. DSD 2012: 1-7 - [c5]Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken:
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT 2012: 1-4 - 2011
- [j9]Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer, Brice De Jaeger:
Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements. IEEE Trans. Very Large Scale Integr. Syst. 19(9): 1569-1582 (2011) - [c4]Felice Crupi, Massimo Alioto, Jacopo Franco, Paolo Magnone, Ben Kaczer, Guido Groeseneken, Jérôme Mitard, Liesbeth Witters, Thomas Y. Hoffmann:
Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling. ISCAS 2011: 2249-2252 - 2010
- [c3]Paolo Magnone, Felice Crupi, Massimo Alioto, Ben Kaczer:
Experimental study of leakage-delay trade-off in Germanium pMOSFETs for logic circuits. ISCAS 2010: 1699-1702
2000 – 2009
- 2009
- [j8]R. Fernández-García, Ben Kaczer, Guido Groeseneken:
A CMOS circuit for evaluating the NBTI over a wide frequency range. Microelectron. Reliab. 49(8): 885-891 (2009) - 2008
- [c2]Georges G. E. Gielen, Pieter De Wit, Elie Maricau, Johan Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, Montserrat Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE 2008: 1322-1327 - 2007
- [j7]A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, Herman E. Maes, Guido Groeseneken, J. A. Kittl:
NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectron. Reliab. 47(4-5): 505-507 (2007) - [j6]Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken:
Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. 47(4-5): 559-566 (2007) - 2006
- [j5]Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectron. Reliab. 46(9-11): 1608-1611 (2006) - [c1]Antonis Papanikolaou, Miguel Miranda, Hua Wang, Francky Catthoor, M. Satyakiran, Pol Marchal, Ben Kaczer, C. Bruynseraede, Zsolt Tokei:
Reliability issues in deep deep sub-micron technologies: time-dependent variability and its impact on embedded system design. VLSI-SoC 2006: 342-347 - 2005
- [j4]Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. Microelectron. Reliab. 45(5-6): 869-874 (2005) - 2003
- [j3]Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen:
A new method for the analysis of high-resolution SILC data. Microelectron. Reliab. 43(9-11): 1483-1488 (2003) - 2002
- [j2]Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. 42(4-5): 555-564 (2002) - [j1]Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger:
High-resolution SILC measurements of thin SiO2 at ultra low voltages. Microelectron. Reliab. 42(9-11): 1485-1489 (2002)
Coauthor Index
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