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ORCIDSanghyeon Baeg
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2020 – today
- 2024
[c10]Nicholas J. Pieper, M. Chun, Yoni Xiong, H. M. Dattilo, Jenna B. Kronenberg, Sanghyeon Baeg, Shi-Jie Wen, Rita Fung, D. Chan, C. Escobar, Bharat L. Bhuva:
Total-Ionizing Dose Damage from X-Ray PCB Inspection Systems. IRPS 2024: 1-7- 2023
- [c9]Hyeongseok Oh, Myungsun Chun, Jiwon Lee, Shi-Jie Wen, Nick Yu, Byung-Gun Park, Sanghyeon Baeg:
Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components. IRPS 2023: 1-6 - 2021
- [j29]Muhammad Waqar
, GeunYong Bak, Junhyeong Kwon, Sanghyeon Baeg:
DDR4 Data Channel Failure Due to DC Offset Caused by Intermittent Solder Ball Fracture in FBGA Package. IEEE Access 9: 63002-63011 (2021) - [j28]Kiseok Lee, Jeonghwan Kim, Sanghyeon Baeg:
Fault Coverage Re-Evaluation of Memory Test Algorithms With Physical Memory Characteristics. IEEE Access 9: 124632-124639 (2021) - [j27]Donghyuk Yun, Myungsang Park, GeunYong Bak, Sanghyeon Baeg, Shi-Jie Wen:
Exploitations of Multiple Rows Hammering and Retention Time Interactions in DRAM Using X-Ray Radiation. IEEE Access 9: 137514-137523 (2021)
2010 – 2019
- 2019
- [j26]Ali Ahmed, Kyungbae Park, Saqib Ali Khan, Naeem Maroof, Sanghyeon Baeg:
Architectural design tradeoffs in SRAM-based TCAMs. IEICE Electron. Express 16(13): 20190267 (2019) - 2018
- [j25]Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. Microelectron. Reliab. 80: 85-90 (2018) - [j24]Hosung Lee, Sanghyeon Baeg:
Signal characteristic and test exploitation for intermittent nanometer-scale cracks. Microelectron. Reliab. 84: 26-36 (2018) - [j23]Tan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg:
Failure signature analysis of power-opens in DDR3 SDRAMs. Microelectron. Reliab. 88-90: 277-281 (2018) - [c8]Donghyuk Yun, Myungsang Park, Chul Seung Lim, Sanghyeon Baeg:
Study of TID effects on one row hammering using gamma in DDR4 SDRAMs. IRPS 2018: 2-1 - 2017
- [j22]Hosung Lee, Sanghyeon Baeg, Nelson Hua, Shi-Jie Wen:
Temporal and frequency characteristic analysis of margin-related failures caused by an intermittent nano-scale fracture of the solder ball in a BGA package device. Microelectron. Reliab. 69: 88-99 (2017) - [j21]Saqib A. Khan, Chul Seung Lim, GeunYong Bak, Sanghyeon Baeg, Soonyoung Lee:
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation. Microelectron. Reliab. 69: 100-108 (2017) - [j20]Ali Ahmed, Kyungbae Park, Sanghyeon Baeg:
Resource-Efficient SRAM-Based Ternary Content Addressable Memory. IEEE Trans. Very Large Scale Integr. Syst. 25(4): 1583-1587 (2017) - 2016
- [j19]Saqib A. Khan, Shi-Jie Wen, Sanghyeon Baeg:
Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation. IEICE Electron. Express 13(17): 20160627 (2016) - [j18]Saqib A. Khan, Shi-Jie Wen, Sanghyeon Baeg:
Erratum: Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation [IEICE Electronics Express Vol. 13 (2016) No. 17 pp. 20160627]. IEICE Electron. Express 13(19): 20168001 (2016) - [j17]Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg:
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. Microelectron. Reliab. 57: 39-46 (2016) - [j16]Kyungbae Park, Donghyuk Yun, Sanghyeon Baeg:
Statistical distributions of row-hammering induced failures in DDR3 components. Microelectron. Reliab. 67: 143-149 (2016) - 2015
- [c7]GeunYong Bak, Soonyoung Lee, Hosung Lee, Kyungbae Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Charlie Slayman:
Logic soft error study with 800-MHz DDR3 SDRAMs in 3x nm using proton and neutron beams. IRPS 2015: 3 - 2014
- [j15]Haibin Wang, Mulong Li, Li Chen, Rui Liu, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi:
Single Event Resilient Dynamic Logic Designs. J. Electron. Test. 30(6): 751-761 (2014) - [j14]Syed Mohsin Abbas, Soonyoung Lee, Sanghyeon Baeg, Sungju Park:
An Efficient Multiple Cell Upsets Tolerant Content-Addressable Memory. IEEE Trans. Computers 63(8): 2094-2098 (2014) - 2013
- [j13]Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Soft error tolerant Content Addressable Memories (CAMs) using error detection codes and duplication. Microprocess. Microsystems 37(8-D): 1103-1107 (2013) - 2012
- [j12]Zahid Ullah, Kim Ilgon, Sanghyeon Baeg:
Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory. IEEE Trans. Circuits Syst. I Regul. Pap. 59-I(12): 2969-2979 (2012) - [j11]Jongsun Bae, Sanghyeon Baeg, Sungju Park:
Characterizing the Capacitive Crosstalk in SRAM Cells Using Negative Bit-Line Voltage Stress. IEEE Trans. Instrum. Meas. 61(12): 3259-3272 (2012) - [c6]Sanghyeon Baeg, Jongsun Bae, Soonyoung Lee, Chul Seung Lim, Sang Hoon Jeon, Hyeonwoo Nam:
Soft Error Issues with Scaling Technologies. Asian Test Symposium 2012: 68 - 2011
- [j10]Juan Antonio Maestro, Pedro Reviriego, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Mitigating the effects of large multiple cell upsets (MCUs) in memories. ACM Trans. Design Autom. Electr. Syst. 16(4): 45:1-45:10 (2011) - [c5]Pedro Reviriego, Juan Antonio Maestro, Sanghyeon Baeg:
Designing ad-hoc scrubbing sequences to improve memory reliability against soft errors. DAC 2011: 700-705 - [c4]Changmin Jung, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Design method of NOR-type comparison circuit in CAM with ground bounce noise considerations. ISQED 2011: 390-397 - 2010
- [j9]Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Minimizing Soft Errors in TCAM Devices: A Probabilistic Approach to Determining Scrubbing Intervals. IEEE Trans. Circuits Syst. I Regul. Pap. 57-I(4): 814-822 (2010)
2000 – 2009
- 2009
- [j8]Sanghyeon Baeg:
Null Detector Circuit Design Scheme for Detecting Defective AC-Coupled Capacitors in Differential Signaling. IEEE Trans. Instrum. Meas. 58(8): 2544-2556 (2009) - [j7]Sanghyeon Baeg:
A di/dt Compensation Technique in Delay Testing by Disconnecting Power Pins. IEEE Trans. Instrum. Meas. 58(10): 3450-3456 (2009) - 2008
- [j6]Sanghyeon Baeg:
Low Power Configuration Strategy of TCAM Lookup Table. IEICE Trans. Commun. 91-B(3): 915-917 (2008) - [j5]Sanghyeon Baeg:
Low-Power Ternary Content-Addressable Memory Design Using a Segmented Match Line. IEEE Trans. Circuits Syst. I Regul. Pap. 55-I(6): 1485-1494 (2008) - 2007
- [j4]Sanghyeon Baeg:
Delay Fault Coverage Enhancement by Partial Clocking for Low-Power Designs With Heavily Gated Clocks. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26(12): 2215-2221 (2007) - 2006
- [j3]Pyoungwoo Min, Hyunbean Yi, Jaehoon Song, Sanghyeon Baeg, Sungju Park:
Efficient Interconnect Test Patterns for Crosstalk and Static Faults. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 25(11): 2605-2608 (2006) - 2005
- [j2]Sanghyeon Baeg, Sung Soo Chung:
Analytical test buffer design for differential signaling I/O buffers by error syndrome analysis. IEEE Trans. Very Large Scale Integr. Syst. 13(3): 370-383 (2005) - 2001
- [c3]Sung Soo Chung, Sanghyeon Baeg:
AC-JTAG: empowering JTAG beyond testing DC nets. ITC 2001: 30-37
1990 – 1999
- 1999
- [j1]Sanghyeon Baeg, William A. Rogers:
A cost-effective design for testability: clock line control and test generation using selective clocking. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 18(6): 850-861 (1999) - 1994
- [c2]Sanghyeon Baeg, William A. Rogers:
A New Test Generation Methodology Using Selective Clocking for the Clock Line Controlled Circuits. ICCD 1994: 354-358 - [c1]Sanghyeon Baeg, William A. Rogers:
Hybrid Design for Testability Combining Scan and Clock Line Control and Method for Test Generation. ITC 1994: 340-349
Coauthor Index
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