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ORCIDAdelmo Ortiz-Conde
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2010 – 2019
- 2017
[j13]Adelmo Ortiz-Conde
, Andrea Sucre-González, Fabián Zárate-Rincón, Reydezel Torres-Torres, Roberto S. Murphy-Arteaga, Juin J. Liou, Francisco J. García-Sánchez:
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters. Microelectron. Reliab. 69: 1-16 (2017)- 2015
- [j12]Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci, Andrea Sucre-González, Juin J. Liou:
A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction. Microelectron. Reliab. 55(2): 293-307 (2015) - 2013
- [j11]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho:
Revisiting MOSFET threshold voltage extraction methods. Microelectron. Reliab. 53(1): 90-104 (2013) - 2011
- [j10]Denise C. Lugo Muñoz, Juan Muci, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Michelly de Souza, Marcelo Antonio Pavanello:
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances. Microelectron. Reliab. 51(12): 2044-2048 (2011) - 2010
- [j9]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Ching-Sung Ho:
Integration-based approach to evaluate the sub-threshold slope of MOSFETs. Microelectron. Reliab. 50(2): 312-315 (2010)
2000 – 2009
- 2009
- [j8]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou:
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. Microelectron. Reliab. 49(7): 689-692 (2009) - 2006
- [j7]Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Jesús Finol, Ramón Salazar, Javier Salce:
Comments on "A sinh Resistor and Its Application to tanh Linearization". IEEE J. Solid State Circuits 41(10): 2359 (2006) - [j6]Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci:
Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria. Microelectron. Reliab. 46(5-6): 731-742 (2006) - 2002
- [j5]Rodolfo Quintero, Antonio Cerdeira, Adelmo Ortiz-Conde:
Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors. Microelectron. Reliab. 42(1): 67-76 (2002) - [j4]Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho:
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. Microelectron. Reliab. 42(3): 343-347 (2002) - [j3]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue:
A review of recent MOSFET threshold voltage extraction methods. Microelectron. Reliab. 42(4-5): 583-596 (2002) - [j2]Xiaofang Gao, Juin J. Liou, Joe Bernier, Gregg D. Croft, Adelmo Ortiz-Conde:
Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21(12): 1497-1502 (2002) - 2001
- [j1]Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. Microelectron. Reliab. 41(4): 605-610 (2001)
Coauthor Index
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