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ORCIDZoubir Khatir
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2010 – 2019
- 2018
[j22]Nausicaa Dornic, Ali Ibrahim
, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov:
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. Microelectron. Reliab. 88-90: 462-469 (2018)- [j21]Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten:
Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices. Microelectron. Reliab. 88-90: 671-676 (2018) - 2016
- [j20]Ali Ibrahim, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir:
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions. Microelectron. Reliab. 58: 204-210 (2016) - [c4]Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal:
Energy management of a battery-flywheel storage system used for regenerative braking recuperation of an Electric Vehicle. IECON 2016: 2034-2039 - [c3]Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal, Mohamad Oueidat:
Control strategy for extreme conditions regenerative braking of a hybrid energy storage system for an electric vehicle. INDIN 2016: 264-269 - 2015
- [j19]Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir:
Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions. Microelectron. Reliab. 55(3-4): 547-551 (2015) - [c2]Abdelfatah Kolli, Alexandre De Bernardinis, Zoubir Khatir, Arnaud Gaillard, Olivier Bethoux, Daniel Hissel:
Part-load control stategy of a 20kW SiC power converter for embedded PEMFC multi-stack architectures. IECON 2015: 4627-4632 - [c1]Thierry Kociniewski, Zoubir Khatir:
Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices. IRPS 2015: 2 - 2014
- [j18]Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir:
μ-Raman spectroscopy for stress analysis in high power silicon devices. Microelectron. Reliab. 54(9-10): 1770-1773 (2014) - [j17]Son-Ha Tran, Laurent Dupont, Zoubir Khatir:
Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions. Microelectron. Reliab. 54(9-10): 1921-1926 (2014) - 2013
- [j16]Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy:
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. Microelectron. Reliab. 53(9-11): 1703-1706 (2013) - [j15]Jeff Moussodji, Thierry Kociniewski, Zoubir Khatir:
Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions. Microelectron. Reliab. 53(9-11): 1725-1729 (2013) - [j14]D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene:
Robustness of 1.2 kV SiC MOSFET devices. Microelectron. Reliab. 53(9-11): 1735-1738 (2013) - 2012
- [j13]D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene:
Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. Microelectron. Reliab. 52(9-10): 1859-1864 (2012) - 2011
- [j12]Jean-Pierre Ousten, Zoubir Khatir:
Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications. Microelectron. Reliab. 51(9-11): 1830-1835 (2011) - [j11]Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani:
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. IEEE Trans. Ind. Electron. 58(10): 4931-4941 (2011) - 2010
- [j10]Zoubir Khatir, Laurent Dupont, Ali Ibrahim:
Investigations on junction temperature estimation based on junction voltage measurements. Microelectron. Reliab. 50(9-11): 1506-1510 (2010) - [j9]M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah:
Ageing of SiC JFET transistors under repetitive current limitation conditions. Microelectron. Reliab. 50(9-11): 1532-1537 (2010)
2000 – 2009
- 2009
- [j8]S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps:
Characterisation of power modules ceramic substrates for reliability aspects. Microelectron. Reliab. 49(9-11): 1260-1266 (2009) - [j7]Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche:
Estimation of SiC JFET temperature during short-circuit operations. Microelectron. Reliab. 49(9-11): 1358-1362 (2009) - 2007
- [j6]Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve:
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. Microelectron. Reliab. 47(2-3): 422-428 (2007) - [j5]M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre:
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectron. Reliab. 47(9-11): 1719-1724 (2007) - [j4]Laurent Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières:
Failure modes on low voltage power MOSFETs under high temperature application. Microelectron. Reliab. 47(9-11): 1767-1772 (2007) - 2006
- [j3]Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps:
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling. Microelectron. Reliab. 46(9-11): 1766-1771 (2006) - 2004
- [j2]Zoubir Khatir, Stéphane Lefebvre:
Boundary element analysis of thermal fatigue effects on high power IGBT modules. Microelectron. Reliab. 44(6): 929-938 (2004) - 2003
- [j1]S. Carubelli, Zoubir Khatir:
Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions. Microelectron. J. 34(12): 1143-1151 (2003)
Coauthor Index
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