[HTML][HTML] Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub) oxide: The examples of Ga and …
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam
epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films
in the presence of oxygen but also in the absence of oxygen for the growth temperature
calibration (by determining the adsorption temperature of the elements) and in situ etching of
oxide layers (eg, Ga 2 O 3 etched by Ga). These elemental fluxes may, however, leave
unwanted cation adsorbates or droplets on the surface, which traditionally require removal …
epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films
in the presence of oxygen but also in the absence of oxygen for the growth temperature
calibration (by determining the adsorption temperature of the elements) and in situ etching of
oxide layers (eg, Ga 2 O 3 etched by Ga). These elemental fluxes may, however, leave
unwanted cation adsorbates or droplets on the surface, which traditionally require removal …