Jacek Gosciniak’s Post

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PhD

I would like to share my latest paper published recently in ACS Photonics in collaboration with Prof. Jacob Khurgin from The Johns Hopkins University about on-chip Schottky photodetectors for Photonic Integrated Circuits (PICs). Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their efficiency remains low. We suggest that by creating a junction between silicon and a transparent oxide with appropriate doping, which results in a real permittivity close to zero (known as the epsilon near zero or ENZ regime), detection efficiency could increase by more than 10-fold. Using Aluminum Zinc Oxide (AZO) as an example, we design an optimized AZO/Si slot photonic waveguide detector that could potentially reach an efficiency of several tens of percent, in contrast to a few percent for a metal/Si Schottky detector. This increase is primarily due to the lower density of states in AZO compared to metal, along with superior coupling efficiency and strong absorption within a 10 nm slot. We focus in this paper on ZnO-based compound as it is biocompatible, biodegradable, biosecure, cheap, CMOS-compatible (as other TCO materials) and is already considered for sensing, optoelectronic and storage applications. However, the family of transparent conductive oxides (TCOs) is very broad, thus, they can operate in a wide range of wavelengths from UV to MIR what opens new possibilities for PICs in NIR and MIR. https://lnkd.in/dwTQ-DhD

Schottky Photodetectors with Transparent Conductive Oxides for Photonic Integrated Circuits

Schottky Photodetectors with Transparent Conductive Oxides for Photonic Integrated Circuits

pubs.acs.org

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