Kalipada Bhukta’s Post

🚀 Exciting News! 🚀 Thrilled to share that my first journal article has been published in IEEE Transactions on Industrial Electronics! Title: "Evolution and Control of Dual-Input Bi-directional Port Boost DC–DC Converter for Battery Storage in DC Systems" #Published #IEEE #IndustrialElectronics #Research Abstract: This article proposes a topological evolution of dual-input single-output dc–dc converter for battery-based dc system. Three sixth-order dual-input boost converters (SODIBC Type-1 to Type-3) have been evolved. Among these, SODIBC Type-3 is identified as the best topology due to its salient feature, which are: high voltage conversion ratio and bi-directional port without increasing the number of controlled switches. It is formulated using a combination of conventional boost and a modified buck–boost converter. An additional switch is inserted to interconnect the battery to the bi-directional port, which also controls the charging and discharging current. The presence of inductor at the input side keeps its source current ripple within the prescribed limits. Also, both the inputs share a common ground with the output, which reduces the electromagnetic interference in the system. This double input single output converter is embedded with multimode operation (Type-A, Type-B, and Type-C) and its mode transition is through simple switch gate control. The power conversion and control features are investigated by transforming it into a two-input two-output multivariable control problem. Through small-signal analysis, the SODIBC transfer function matrix model is formulated. On the basis of this, a multivariable diagonal controller is designed for battery discharging operation by enforcing the gain margin and phase margin specifications. These are ensured here by shaping the Gershgorin bands, which are due to the interaction indicating off-diagonal transfer functions of the plant transfer function matrix. The mathematical modeling of the topologies and comparison analysis has been carried out. Finally, a 100 W SODIBC prototype has been developed to confirm the effectiveness of battery bi-directional power transfer capability and the designed multivariable control strategy. https://lnkd.in/g-Tnf-6R

Finally, the IHP state-of-the-art SiGe BiCMOS 28 GHz #beamformer #chip for #5G is out! This work could save up to #1mm in length of silicon. Publication in the IEEE Transactions on Microwave Theory and Techniques: https://lnkd.in/diJuD9Cs

I am happy to share that our paper titled "𝘚𝘮𝘢𝘭𝘭-𝘚𝘪𝘨𝘯𝘢𝘭 𝘚𝘵𝘢𝘣𝘪𝘭𝘪𝘵𝘺 𝘢𝘯𝘥 𝘏𝘢𝘳𝘥𝘸𝘢𝘳𝘦 𝘝𝘢𝘭𝘪𝘥𝘢𝘵𝘪𝘰𝘯 𝘰𝘧 𝘋𝘶𝘢𝘭-𝘗𝘰𝘳𝘵 𝘎𝘳𝘪𝘥-𝘍𝘰𝘳𝘮𝘪𝘯𝘨 𝘐𝘯𝘵𝘦𝘳𝘤𝘰𝘯𝘯𝘦𝘤𝘵𝘪𝘯𝘨 𝘗𝘰𝘸𝘦𝘳 𝘊𝘰𝘯𝘷𝘦𝘳𝘵𝘦𝘳𝘴 𝘪𝘯 𝘏𝘺𝘣𝘳𝘪𝘥 𝘈𝘊/𝘋𝘊 𝘎𝘳𝘪𝘥𝘴" has been accepted in the 𝐈𝐄𝐄𝐄 𝐉𝐨𝐮𝐫𝐧𝐚𝐥 𝐨𝐟 𝐄𝐦𝐞𝐫𝐠𝐢𝐧𝐠 𝐚𝐧𝐝 𝐒𝐞𝐥𝐞𝐜𝐭𝐞𝐝 𝐓𝐨𝐩𝐢𝐜𝐬 𝐢𝐧 𝐏𝐨𝐰𝐞𝐫 𝐄𝐥𝐞𝐜𝐭𝐫𝐨𝐧𝐢𝐜𝐬. In this paper, we delve into: The crucial role of Interconnecting Power Converters (IPCs) in integrating high-voltage AC and DC subgrids. How dual-port grid-forming control offers enhanced stability and performance across IPCs compared to traditional control methods. Validation of our findings through detailed models, case studies, and experiments on a scaled laboratory system. This work is part of my doctoral secondment at KTH Royal Institute of Technology in the mark of Unite! - University Network for Innovation, Technology and Engineering agreement. Huge thanks to: Mehrdad Nahalparvari, for your amazing support. Dominic Gross, for your invaluable contributions. Staffan Norrga, for the opportunity to be at KTH. My supervisors, Eduardo Prieto Araujo and Oriol Gomis Bellmunt, and the entire CITCEA-UPC team. #PowerElectronics #GridForming #HVDC #IEEE

Integrating E-Mode GaNFETs with a GaN-based gate regulating circuit can significantly enhance the reliability and compatibility of gate driving for GaN switches while preserving the fast-switching properties and mitigating ringing caused by co-packaging related parasitic components. Read More ⬇️ https://bit.ly/4eSrMbC

Highly Robust GaN Power Amplifier at Millimeter-wave Frequencies using Sputtered Iridium Gate MMIC Technology This article presents the application of FBH’s sputtered Iridium (Ir) gate technology for the design and realization of a highly robust power amplifier (PA) intended for satellite communication systems at millimeter-wave frequencies. Compared to the benchmark monolithic microwave integrated circuit (MMIC) chip fabricated with Pt-evaporated gate, the Ir-sputtered technology demonstrated much less degradation in terms of the total drain current, output power, and PAE after stress. The superior performance has demonstrated the great potential of this technology for highly robust applications at millimeter-wave frequencies. Paper Link: https://lnkd.in/gzV7CAkx

📄 Paper sharing: Open-Circuit Switch Fault Diagnosis in Single-Phase CHMC with Switching Duty Ratio-Based Estimated Grid Current We are pleased to introduce the paper "Open-Circuit Switch Fault Diagnosis in Single-Phase CHMC with Switching Duty Ratio-Based Estimated Grid Current" written by Hyeon-Woo Oh, Dongho Choi, Jeong-Yul Bang, and June-Seok Lee from Dankook University. The paper was presented at the 2024 IEEE Applied Power Electronics Conference and Exposition (APEC). Know more about this paper: https://lnkd.in/gJ3d5gyM 👉 Brief Introduction This paper introduces a method for diagnosing open-circuit switch (OCS) faults in single-phase cascaded H-bridge multilevel converters (CHMC) using an estimated grid current based on the switching duty ratio. The proposed technique estimates the grid current through the switching duty ratio of each switch during the control period. The faulty switch pair is then identified by analyzing the sign and magnitude of the residual between the estimated and sampled grid currents. Finally, the location of the faulty switch is determined by comparing the magnitude of the residual with the reversely calculated residual. DSIM simulation results confirm the effectiveness of this approach.   ✅ Verify the effectiveness of the OCS fault diagnosis techniques using DSIM In the topology where DSIM is used to verify the effectiveness of OCS fault diagnosis techniques, the gate voltage is 100 V, the gate frequency is 60 Hz, the module DC-link voltage is 60 VDC, the switching frequency of CHMC is 1.67 kHz, the control period of CHMC is 200 μs, the DAB output voltage is 40 VDC, the switching frequency of DAB is 10 kHz, and the Filter inductance is 1.9 mH. According to the DSIM simulation results, the faulty switch can be identified. #DSIM #Simulation #PowerElectronics #Paper #Switch #CHMC

The article discusses a radio-frequency-based #self-#interference #cancellation (#SIC) technique to handle the self-interference signal segment associated with the self-interference caused by antennas’ #mutual #coupling, particularly for dedicated-transmit-and-receive antenna configurations. The technique is a novel SIC technique based on antenna decoupling utilizing a lossless network in the radio frequency domain. At first, the authors present a fundamental physical and mathematical description of the self-interference radio channel, employing #antenna #scattering #matrix representation and #spherical #vector #wave #expansion. Then, the article presents the experimental results of two antenna mutual coupling measurements – including a single-input-single-output setup and a 2×2  #dual-#polarized #multiple-#input-#multiple-#output (#MIMO) setup. Afterward, the authors discuss the lossless network #decoupling #technique for MIMO full-duplex wireless transceivers. Finally, the authors present a generalized- Π synthesizing topology of the lossless decoupling network and empirically evaluate its SIC performance by leveraging the conducted antenna mutual coupling measurement results. ---- Ramez Askar, Wilhelm Keusgen More details can be found at this link: https://lnkd.in/eZnSRjAV

This letter present a 120 GBd 2.8 V_{\mathrm {pp,diff}} driver for InP #Mach–Zehnder #modulator (#MZM) using 55-nm SiGe #heterojunction #bipolar #transistor (#HBTs). The output impedance of the driver has a differential 2\times 25\,\,\Omega , matched to the optical modulator. The measured 3-dB bandwidth exceeds 67 GHz, and the output P_{\mathrm {1\,dB}} is about 16.7 dBm at 1 GHz. The variable gain using the Gilbert-cell is implemented, and a 2.1 dB gain variation is measured. The #total #harmonic #distortion (#THD) is 2.5% at 1 GHz. The power consumption is 960 mW. The eye openings up to 120 GBd are characterized by exploiting the impedance conversion #integrated #circuit (IC), which is de-embedded afterward. The post-processing of the de-embedding results in the rail-to-rail voltage output of 2.8 V_{\mathrm {pp,diff}} . ---- Jung Han Choi, Nisarg Nijanandi More details can be found at this link: https://lnkd.in/ew-FTiDR

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Join us each month on “The GRID,” a monthly Quantic Electronics #webinar series where you will hear industry subject matter experts, provide valuable insights and knowledge on the latest trends and developments in RFMW, capacitor, resistor, magnetics and sensing technology and engineering. Select the link below to learn more and register for our next webinar, "How Patented Ceramic Gap Capacitors Will Disrupt the RF & Microwave Industry." https://lnkd.in/gmqqrirW #croven #rf #quanticnow