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#Automotive #Embedded Santa Clara, CA and Kyoto, Japan, Nov. 08, 2023 (GLOBE NEWSWIRE) — ROHM Semiconductor today introduced the new BD2311NVX-LB gate driver IC, optimized for GaN devices, which achieves gate drive speeds on the order of nanoseconds (ns), ideal for high-speed switching. This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate … Read More → "ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices" https://lnkd.in/gUEyApUU
