METAL DEPLOYE RESISTOR’s Post

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Workshop Alert: "Wide Bandgap (WBG) Power Electronics EMI and Solutions." Please join us at 8:30 AM-12:00 PM on Aug 5th, 2024, in Room 127C at Phoenix Convention Center, Phoenix, AZ, during the 2024 EMC + SIPI conference. Abstract: Wide bandgap (WBG) power semiconductors, such as SiC MOSFETs and GaN HEMTs, have higher switching speeds and lower conduction power loss than conventional Si power semiconductor devices like IGBTs and MOSFETs. They are becoming more popular in modern power electronics applications, such as renewable energy, HVDC, aerospace, and power grid support because they can achieve higher energy efficiency with higher power densities. They are expected to replace conventional Si power devices in the future. However, their high switching frequencies and speeds cause high electromagnetic interference (EMI), which results in extra components for EMI filtering. This cancels the benefits of WBG devices. It is, therefore, important to investigate the EMI characteristics of WBG power electronics and the solutions to reduce the EMI without sacrificing performance, power density, and efficiency. Co-sponsored by IEEE Power Electronics Society, this workshop will focus on the recent advances in modeling, measurement, and suppression of EMI for WBG power electronics systems. #WBG #WideBandGap #EMI #ElectromagneticInterference #EMC #PowerElectronics #SiC #GaN #MotorDrive #Converter #MOSFET #HVDC

POWER ELECTRONICS a key knowledge for energy transition.

This week in #AddMorePower, we’re diving into Gallium Nitride (GaN), a game-changing semiconductor material! What makes GaN special? 🌟 High Efficiency: GaN handles higher voltages and operates at higher frequencies with less energy loss. 🌟 Power Density: Smaller and lighter devices are possible thanks to GaN’s ability to handle more power per unit area. 🌟 Thermal Stability: GaN performs reliably even in high-temperature environments. 🌟 Wide Bandgap: Its wide bandgap means lower leakage currents and better performance compared to materials like silicon. Why choose GaN over other semiconductors? ✅ Faster Switching Speeds: Outperforms silicon in power electronics, enabling more efficient and compact systems. ✅ Improved Energy Efficiency: Ideal for reducing energy waste in power systems. ✅ Versatility: Used in RF components, LEDs, 5G tech, and more! From powering renewable energy systems to revolutionizing telecommunications, GaN is shaping the future of materials science. #MaterialsScience #GalliumNitride #Innovation #HEU

🌟 Explore the Latest in Power Factor Correction! 🌟 👨🎓 Claudio Adragna, Alberto Bianco, Giovanni Gritti and Matteo Sucameli from STMicroelectronics The new article, "State-of-the-Art Power Factor Correction: An Industry Perspective," delves into the evolution and impact of power factor correction (PFC) in today's electronic landscape. It examines how PFC addresses current harmonics and enhances energy efficiency, highlighting the most utilized techniques and their significance in compliance with regulations like IEC 61000-3-2. 🔍 This comprehensive review is a must-read for industry professionals and academics alike, showcasing how PFC improves performance and reliability in power systems. Read the full article here: https://lnkd.in/g3FB95mT #PowerFactorCorrection #EnergyEfficiency #Electronics #Engineering #ResearchInsights

Dear network, Have you ever considered the inductive behavior of cylindrical LiFePo4 batteries under impulse currents? In our latest study, we introduce a modeling approach for the transient response of batteries to fast-front impulse currents. We present an experimental methodology that facilitates time-domain simulation of the battery's surge performance through a straightforward process involving mathematical analysis of experimental data. Using a lithium iron phosphate battery as our case study, our non-linear equivalent circuit model demonstrates excellent agreement with experimental data for both standard and non-standard impulse currents, with wavefront durations longer than 3 μs and time-to-half up to 60 μs. This work offers an advanced framework for enhancing the surge protection of battery systems, contributing to the reliability and resilience of modern power grids against lightning events and electromagnetic pulses. I invite you to read our open-access article in IEEE Transactions on Consumer Electronics, co-authored by Prof. Thomas Tsovilis. https://lnkd.in/d2HXcDup #IEEE #BESS #modeling #EMT #innovation #surgeprotection #sustainable

We encourage you to explore one of the July TCAS-I Paper Highlight videos "A High Sensitivity CMOS Rectifier for 5G mm-Wave Energy Harvesting". 📝 Authored by: Edoh Shaulov, Tal Elazar, Eran Socher Harvesting RF cellular power has vast potential to reduce battery reliance in low-power, wireless electronics. However, the challenge of efficiently converting the low-power RF signal to dc power remains a challenge, especially in the mm-Wave domain and, even more so, for CMOS. This work proposes a power-splitting and voltage-summation rectifier design technique that allows one to target a specific output voltage while optimizing power conversion efficiency (PCE). By splitting the input power to n rectifiers and series connecting them in dc, PCE saturation is mitigated and high output voltage can be achieved. This technique is thoroughly investigated in simulation and modelling, and validated by fabrication (TSMC 65 nm) and measurements where the proposed design achieves a record 400 mV output voltage and 15% PCE for -10 dBm input power at 28 GHz. Watch the video to learn more 👇 🔗 Read the paper on IEEE Xplore here: https://loom.ly/FhrLOjY #IEEECASS #TCASI #JulyHighlight

A brief history of SMPS! As detailed in the recent article published in Power Electronics News (PEN), the transition from linear power regulation to switch-mode power supplies (SMPS) has been a transformative force in the power electronics industry. The result of decades of breakthrough research and development, combined with continuous improvements across technologies ranging from power devices, controller ICs, and topologies to semiconductor processes and materials, is that the SMPS is now widely employed in power conversion. I am honored that my white paper, "1980: A Pivotal Point in the Power Industry was cited and referenced in this article. You can read the full PEN article online:https://lnkd.in/d7WAbKC5 #prbx #power #powersupply #powerelectronics #space #energy #energyefficiency #technology #powerengineering #powersolution #powerelectronicsnews

Although #Gallium #Nitride (#GaN) Field Effect #Transistor (#FET) devices have found extensive application in DC-DC converters, their utilization in inverter #motor #drives remains an evolving area of study. In particular, the intricacies of reverse conduction operation during the dead time, specific to GaN FETs, require in-depth exploration for inverters supplying AC currents to electrical motors. Therefore, this paper undertakes an assessment of reverse conduction during the dead time intervals in low-voltage GaN FETs employed in motor drives applications. This analysis provides correlations between device technology attributes and the variations in AC phase current. To facilitate this investigation, a dedicated numerical tool is developed to evaluate the reverse conduction characteristics of GaN FET and associated power losses. Furthermore, this study includes a comparative analysis of the reverse conduction behavior of GaN FET devices with their low-voltage #MOSFET counterparts, taking into account their differing static and dynamic characteristics. As a result, the main contribution of this work is to provide to the inverter designers a comprehensive understanding of dead-time effects in GaN-based inverters, along with guidance on selecting and optimizing dead time intervals within inverter legs for motor control applications employing the latest generation of GaN FET devices. Check it out!   Title: “Influence of Reverse Conduction on Dead Time Selection in GaN-Based Inverters for AC Motor Drives”   Authors: Salvatore Musumeci Vincenzo Barba; Fausto Stella; Fabio Mandrile; Marco Palma (EPC - Efficient Power Conversion); Iustin Radu Bojoi   Journal: IEEE Access   Full text available at: https://lnkd.in/dc7a_USj #PEIC #IEEE #PowerElectronics #ElectricDrives #ElectricalEngineering #Electricity #GaN

Telecom applications powered with 650 V Enhancement Mode GaN Power Transistor from Infineon Technologies Learn more: https://ow.ly/fyaR50Utfv7 #datasheet #manufacturing #telecom #powersupplies #powersupply #powerengineering #gan #galliumnitride #powermanagement #powerelectronics