Power Electronic Devices and Components’ Post

Latest paper published in Power Electronic Devices and Components 👇 https://shorturl.at/dkquN Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey by L F S Alves , P Lefranc , P-O Jeannin , B Sarrazin Grenoble Alpes University, CNRS, Grenoble INP, G2Elab, Grenoble 38000, France Highlights: - In addition to achieving a higher breakdown voltage, series-connected SiC-MOSFETs exhibit better on-resistance and higher current density compared to using a single higher voltage device. - Mismatch between device parameters, parasitic components, and gate signal timing delays are the most important causes related to the voltage-sharing performance of series-connected SiC-MOSFETs. - Due to the higher switching speed transition, some conventional voltage balancing techniques designed for Si-IGBTs and Si-MOSFETs are no longer suitable for SiC devices. - Active gate control methods rank among the predominant voltage balancing techniques for series-connected SiC-MOSFETs. #PED_C #series_connected #SiC_MOSFET #Voltage_balancing_techniques

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