PHELIQS - Quantum Photonics, Electronics and Engineering’s Post

Read the new paper by Alrik Durand, Yoann Baron, Félix Cache, Tobias Herzig, Mario KHOURY, Sebastien Pezzagna, Jan Meijer, Jean-Michel HARTMANN, Shay Reboh, Marco Abbarchi, Isabelle Robert-Philip, Jean-Michel Gérard, Vincent Jacques, Guillaume Cassabois, and Anaïs Dréau studying single 𝐺 centers in carbon-implanted silicon. 👉 https://lnkd.in/epAVaWxf Single color centers recently isolated in carbon-implanted silicon with an emission line at 1.28 𝜇m have so far been identified as a well-known defect called the 𝐺 center. In this paper, the authors demonstrate that these single defects are actually divided into two distinct families, each with specific single-photon properties. On one side are the genuine G centers, and on the other, the faux G centers, which belong to a different defect labeled the G⋆ center.  These results provide a safeguard against future defect misidentifications, which is crucial for the further development of quantum technologies relying on the quantum properties of G or G⋆ centers. This work is the result of a collaboration between the University of Montpellier, Leipzig University, IM2NP CNRS UMR 7334, CEA-Leti, SOLNIL, and the NPSC - Nanophysics and Semiconductors team of PHELIQS - Quantum Photonics, Electronics and Engineering. #researchpaper #quantumphotonics #photonics #nanotechnology #siliconphotonics CEA-Irig, Université Grenoble Alpes, Grenoble INP - UGA

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