Qromis, Inc., a Silicon Valley based company, unlocks the full potential of #GaN through a myriad of distinct features of its patented #QST engineered substrate technology. Of those, check the attached animation on two important aspects of this groundbreaking technology:
1) MANUFACTURING of QST substrates in traditional CMOS fabs using conventional semiconductor materials and processes which is similar to Silicon-on-Insulator (SOI) substrates with respect to manufacturing processing and cost.
2) SUSTAINABILITY and REDUCED CARBON FOOTPRINT of the QST substrate manufacturing by utilizing energy efficient mainstream semiconductor process tools in CMOS fabs with an over 98% yield and a process cycle time of less than 7 days.
These are critical components of the QST innovation which was carefully designed per the projected cost and sustainability / net-zero requirements in the industry which separate this disruptive technology from the manufacturing of native GaN substrates or non-native Si, Sapphire or SiC substrates.
Further details will be presented at #PowerUP & #Fortronic Conference & Expo on September 18 & 19, LIVE in Milan, Italy:
- Our President & CEO Cem Basceri Basceri and other industry experts in EXECUTIVE PANEL SESSION on September 18 (16:30 – 18:00) will dive into exploring advancements and addressing challenges in GaN and SiC Technologies, moderated by Maurizio Di Paolo Emilio, Editor-in-Chief, Power Electronics News.
- Our CTO Vladimir Odnoblyudov Odnoblyudov will present on September 19 (14:30 – 14:55) how Qromis’ groundbreaking SEMI standard QST engineered substrate technology is taking GaN adoption to the next level by large diameter (200 mm and 300 mm), scalable (100 V to 2000 V and beyond) and CMOS fab-friendly GaN-on-QST manufacturing platform for GaN power devices, as well as GaN RF and optoelectronic devices.
#power#powerelectronics#RF#optoelectronics#semiconductor#widebandgap#WBG#galliumnitride#engineeredsubstrate#CMOS#silicononinsulator#SOI#sustainability#carbonfootprint#netzero#semistandard#semispec#silicon#Si#sapphire#SiC#powerelectronicsnews
PRESS RELEASE:
Our licensee and manufacturing partner Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) starts sampling 300 mm SEMI-spec, #CMOS fab-friendly #QST substrates. This marks another critical milestone for unlocking the full potential of #GaN electronics.
The addition of the 300 mm QST substrate to the commercial 150 mm and 200 mm QST substrate products will accelerate the adoption of GaN devices for #power, #RF, #microLED and other applications. Qromis, Inc. and Shin-Etsu are committed to contribute to the realization of a sustainable society where energy can be used efficiently through implementation of GaN devices.
The company exhibits 300 mm QST substrate at @SEMICON TAIWAN during September 4-6, 2024.
#semiconductor#widebandgap#WBG#galliumnitride#power#powerelectronics#powerconversion#RF#microLED#AIhttps://lnkd.in/dreMeJ8P
A must-have Springer GaN Technology book, edited by Maurizio Di Paolo Emilio, Editor-in-Chief, #PowerElectronicsNews, has arrived – diving into fresh updates on materials, manufacturing, devices and design for emerging GaN power conversion technologies.
PREFACE: “…This volume stands as a comprehensive exploration of GaN technology, encompassing its foundational principles, manufacturing processes, diverse applications across various industries, and the challenges and future trends shaping its trajectory. It features contributions from a multitude of experts in the field, each focusing on specific aspects of GaN technology…”
Our Chapter in this masterpiece, titled “TAKING GaN POWER TO THE NEXT LEVEL: 100V TO 2,000V and BEYOND SCALABILITY, WITH 200mm and 300mm QST MANUFACTURING PLATFORM” - authored by Vladimir Odnoblyudov and Cem Basceri - covers how Qromis, Inc. is UNLOCKING THE FULL POTENTIAL of GaN with its disruptive and commercially available engineered substrate technology QST.
PURCHASE YOUR COPY: https://lnkd.in/exf422u3#GaN#SpringerBooks#PowerElectronics#semiconductor#widebandgap#WBG#galliumnitride#power#powerconversion#powerelectronicsdesign#EV#AI#Qromis#QST
PART-2
We are excited to be a part of #PowerUP & Fortronic Conference & Expo on September 18 & 19, LIVE in Milan, Italy!
Join our CTO Vladimir Odnoblyudov for his talk during the Technical Conference, titled:
“PROPELLING GAN ELECTRONICS ADOPTION WITH LARGE DIAMETER AND CMOS FAB-FRIENDLY GaN-on-QST MANUFACTURING PLATFORM”
The presentation will highlight how Qromis, Inc.’s groundbreaking SEMI standard #QST engineered substrate technology is taking #GaN adoption to the next level by large diameter (200 mm and 300 mm), scalable (100 V to 2000 V and beyond) and CMOS fab-friendly GaN-on-QST manufacturing platform for GaN #power devices, as well as GaN #RF and #optoelectronic devices.
When: September 19, 14:30-14:55.
See you there!
Register for free now: https://lnkd.in/du_MCCbA#PowerUP#PowerElectronics#PowerElectronicsNews#widebandgap#WBG#galliumnitride#siliconcarbide#power#powerelectronicsdesign#AI
Product Designer - Connect SOI Business Unit at SOITEC
3moLooking forward to this!