Leading Industry Innovation: Risen Energy Attends High-Efficiency N-Type Heterojunction Module Testing Technology Closed-Door Meeting
In recent years, with the rapid development of photovoltaic (PV) technology in China, high-efficiency N-type PV module technologies, represented by HJT (Heterojunction) and TOPCon, have made significant breakthroughs. The export volume of these high-efficiency modules is increasing, gradually replacing conventional PERC modules in the market. Known for their high capacitance, TOPCon and HJT technologies introduce advanced passivation processes, interface structures between thin films and crystalline silicon, encapsulation materials, UV cut-off films, and light conversion films. These advancements have presented new challenges for module power testing under Standard Test Conditions (STC) and reliability testing.
Following the recent collaboration between Risen Energy and KIWA PI China in linking Chinese and European testing institutions, a closed-door meeting on high-efficiency N-type module testing technology was successfully held on August 22 in Suzhou, co-hosted by the National Institute of Metrology (NIM) and KIWA New Energy. The seminar brought together representatives from leading companies in the PV industry to discuss the latest advancements and future trends in testing technologies for high-efficiency N-type solar modules. Dr. Yang Pochuang from Risen Energy led the company's delegation as one of the representatives of high-efficiency heterojunction technology.
At the seminar, Xiong Limin, Chief Metrologist of the National Institute of Metrology, shared his deep industry insights and expertise, explaining the impact of light, temperature, and electricity on testing accuracy in PV module testing. He also discussed the measures currently being taken within the industry to address these challenges, detailing the evolution of IV curve measurement processes and solutions. As cell passivation technology advances, the high capacitance of N-type TOPCon and HJT cells has become a key factor affecting testing accuracy. In response, the National Institute of Metrology has conducted extensive testing and research, developing rapid testing solutions tailored to TOPCon and HJT technologies and setting new requirements for testing equipment.
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Xiong also analyzed the key characteristics of HJT technology as a next-generation PV module route, highlighting its notable metastability compared to conventional P-type modules. He emphasized the importance of addressing metastability issues caused by long-term storage in dark environments or prolonged exposure to aging test chambers before conducting power testing. He emphasized the activation methods of light injection and electrical injection as effective solutions for addressing power testing discrepancies in modules. Xiong also proposed building standardized PV power plant metrology verification platforms to design targeted tests and studies based on product characteristics and market feedback.
The meeting also included a review of exchanges with several leading European laboratories, analyzing the differences in testing procedures across various labs. Presentations were made on HJT module reliability evaluation, covering factors such as ultraviolet (UV) exposure, potential-induced degradation (PID), and temperature and humidity conditions. This exchange not only deepened the participants' understanding of the practical applications of HJT technology but also provided valuable insights for future technology development and market promotion.
During the discussion session, industry experts debated the calibration and usage of HJT standard PV modules. It was unanimously agreed that using electrical injection methods for stability treatment of HJT modules is essential to eliminate the impact of metastability. Moving forward, companies will explore standardized testing methods for electrical injection of B-O LID across different HJT process technologies. This face-to-face exchange not only strengthened mutual understanding and trust but also laid a solid foundation for the further promotion and application of HJT technology.