MRAM startup has China wafer fab plans

Startup HFC Semiconductor Corp. is on a recruitment drive for engineers to develop magnetoresistive random access memory (MRAM) technology and components and manufacture them in a 300mm fab in China.

Originally founded in New York state in May 2017, HFC (Albany, New York) now has staff in the US, Taiwan and China and claims to be developing its technology in collaboration with IBM. In some of the recently posted job adverts, the company is described as being focused on "14nm logic, MRAM and other technologies."

HFC's website indicates that the company has a perpendicular magnetic tunnel junction (pMTJ) device and describes its spin-torque transfer MRAM as being performance optimized and able to bring storage closer to compute. "The integration of MRAM in CMOS back-end-of-line can be achieved with adding as few as three masks, providing low-cost fabrication," the website observes.

On the LinkedIn website HFC Semiconductor states it plans, "to build full MRAM production capacity within the next couple of years." Job adverts elsewhere indicate that HFC Semiconductor has a rapidly expanding R&D centre in Taiwan and is planning to build or acquire a 300mm wafer fab in China.

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