Qromis, Inc. reposted this
Advancement of semiconductor technology depends on the epitaxial growth of #GaN films, especially in high-frequency and power devices. But because of mismatched characteristics between substrates and #epitaxial layers—such as lattice constant and thermal expansion coefficient mismatches—ability to grow high quality and scalable GaN epitaxial layers on non-native substrates, such as #silicon (Si) and sapphire, suffer great difficulties and prevent unlocking the full potential of GaN. Using SEMI-spec and CMOS fab-friendly QST engineered substrates, which very closely match to the CTE of GaN over a wide temperature range, Vanguard International Semiconductor Company (VIS) solves these problems and allows the deposition of crack-free, high quality and easily scalable high-performance GaN epitaxial layers on 200 mm platform. In an interview with Power Electronics News, Shyh-Chiang Shen, Director of GaN Program Development Division at VIS, discussed the techniques and innovations VIS used to overcome obstacles, emphasizing their investment in GaN technology and its broader implications for the semiconductor sector. #galliumnitride #technology #powerelectronics #industry #widebandgap Qromis, Inc.