Postdoctoral fellow at the Canadian Centre for Electron Microscopy | Semiconductor characterization | Atom probe tomography
Check out this highlight of a recent study investigating the local 3D dopant distribution within SiC power semiconductor devices using atom probe tomography!
⚡ Advancements in power electronics! A recent collaboration between the Canadian Centre for Electron Microscopy and TechInsights explores the complexities of SiC semiconductor processing. Using Atom Probe Tomography, Ramya Cuduvally and Stephen Russell provide significant insights into aluminum dopant distribution within SiC Junction Field Effect Transistor. This research highlights the challenges and breakthroughs in enhancing device performance through precise dopant characterization. Read the application note: https://ow.ly/1RCM50SRYp9 🔬📈 #PowerElectronics #Semiconductors #SiC #APT