#Gallium #nitride, the world's second most manufactured semiconductor, exhibits advantageous optical properties for #photonic #integrated #circuits but remains relatively unexplored by the R&D community. Join us for a Swissphotonics lunch chat by Ian Rousseau, Founder/Director of Hexisense who will discuss the historical limitations of gallium nitride as a photonic material, progress toward C-band microresonators with quality factors exceeding 10^6, and a vision for GaN as a #nanophotonic #platform, see https://lnkd.in/djRMhBiT #Photonics Swissphotonics #PICs
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Graphene oxide films show tunable properties for integrated photonics applications. Research reveals graphene oxide's highly tunable optical and thermal properties when integrated with photonic devices, offering new possibilities for advanced optical components - https://lnkd.in/gW-auntu #photonics
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Graphene oxide films unlock new capabilities for silicon photonics. Researchers harness unique properties of graphene oxide integrated onto silicon waveguides to enable all-optical control, power limiting, and nonreciprocal transmission on photonic chips - https://lnkd.in/gZR85iUe #photonics
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Silicon-carbide (SiC) can provide a platform for on chip integrated photonics which enhances favorable material nonlinear optical properties and thus enhance single photon emission of a color center. In this review, researchers summarize all necessary elements required to establish spin-photon interface based on color centers as spin qubits in SiC-on-insulator. Learn more: https://lnkd.in/eAdepMMM #SOI #SiC #photonics #semiconductor #research
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A fabrication methodology for wafer-scale vertical integration of potassium tantalate niobate (KTN) material onto silicon-on-insulator (SOI) wafers is described in this study, which provided a first insight into the feasibility of wafer-scale integration of KTN waveguides onto a silicon photonics platform and lays the initial groundwork for realising high-speed and efficient optical modulators. Read: https://lnkd.in/e4_Xr2KR #SOI #photonic #semiconductor #research
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𝗢𝗽𝘁𝗶𝗺𝗶𝘇𝗶𝗻𝗴 𝗕𝗿𝗼𝗮𝗱𝗯𝗮𝗻𝗱 𝗦𝗶𝗹𝗶𝗰𝗼𝗻 𝗪𝗮𝘃𝗲𝗴𝘂𝗶𝗱𝗲 𝗖𝗿𝗼𝘀𝘀𝗶𝗻𝗴𝘀 𝘄𝗶𝘁𝗵 𝗣𝗮𝗿𝘁𝗶𝗰𝗹𝗲 𝗦𝘄𝗮𝗿𝗺 𝗢𝗽𝘁𝗶𝗺𝗶𝘇𝗮𝘁𝗶𝗼𝗻 It enables more efficient and versatile silicon photonics components, reducing insertion loss and improving crosstalk and reflection across a broader bandwidth. 𝗪𝗵𝘆 𝗶𝘁 𝗺𝗮𝘁𝘁𝗲𝗿𝘀 ‣ PSO-optimized waveguide crossings achieve insertion loss of just 0.190 dB, outperforming previous designs. ‣ Crosstalk remains low at -30.84 dB, essential for maintaining signal integrity in complex photonic circuits. ‣ Reflection is reduced to -26.15 dB, a key factor for enhancing performance in broadband applications. 𝗥𝗲𝗮𝗱 𝘁𝗵𝗲 𝗳𝘂𝗹𝗹 𝗮𝗿𝘁𝗶𝗰𝗹𝗲: https://lnkd.in/eCA59EZ5 #Silicon #Photonics #Waveguide #Subwavelength #Grating #Optical
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Researchers have demonstrated watt-class high-power amplifiers in silicon photonics using LMA waveguide technology, achieving on-chip output power exceeding ~1W within a ~4.4mm² footprint. This development could significantly impact integrated photonics applications by enabling higher power levels. https://lnkd.in/eB9TT4mx #Photonics #SiliconPhotonics #OpticalAmplifiers Citation: Figure 1 from Singh, N., Lorenzen, J., Wang, K. et al. Watt-class silicon photonics-based optical high-power amplifier. Nat. Photon. (2025). https://lnkd.in/gb2aksjA
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High linearity electro-optic modulator and microwave photon application With the increasing requirements of communication systems, in order to further improve the transmission efficiency of signals, people will fuse photons and electrons to achieve complementary advantages, and microwave photonics will be born. The electro-optical modulator is needed for the conversion of electricity to light in microwave photonic systems, and this key step usually determines the performance of the whole system. Since the conversion of radio frequency signal to optical domain is an analog signal process, and ordinary electro-optical modulators have inherent nonlinearity, there is serious signal distortion in the conversion process. In order to achieve approximate linear modulation, the operating point of the modulator is usually fixed at the orthogonal bias point, but it still cannot meet the requirements of microwave photon link for the linearity of the modulator. Electro-optic modulators with high linearity are urgently needed. The high-speed refractive index modulation of silicon materials is usually achieved by the free carrier plasma dispersion (FCD) effect. Both the FCD effect and PN junction modulation are nonlinear, which makes the silicon modulator less linear than the lithium niobate modulator. Lithium niobate materials exhibit excellent electro-optical modulation properties due to their Pucker effect. At the same time, lithium niobate material has the advantages of large bandwidth, good modulation characteristics, low loss, easy integration and compatibility with semiconductor process, the use of thin film lithium niobate to make high-performance electro-optical modulator, compared with silicon almost no “short plate”, but also to achieve high linearity. Thin film lithium niobate (LNOI) electro-optic modulator on insulator has become a promising development direction. With the development of thin film lithium niobate material preparation technology and waveguide etching technology, the high conversion efficiency and higher integration of thin film lithium niobate electro-optic modulator has become the field of international academia and industry. #Optical #photonics #semiconductor #Optics #opticalcenter #SiliconPhotonics #photodetectors #optomechanics #laser Read more: https://lnkd.in/eEiNWZRC
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Wave Photonics Introduces Silicon Nitride Process for Quantum Photonics Read More https://lnkd.in/dHJHum5U Wave Photonics #silicon #nitride #process #quantum #emitters #computational #design #fabrication #imperfections #wafer #memory #infrared #insights #photonics #industry #news
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𝗢𝗻-𝗖𝗵𝗶𝗽 𝗜𝗻𝘁𝗲𝗴𝗿𝗮𝘁𝗶𝗼𝗻 𝗼𝗳 𝗤𝘂𝗮𝗻𝘁𝘂𝗺 𝗗𝗼𝘁 𝗟𝗮𝘀𝗲𝗿𝘀 𝘄𝗶𝘁𝗵 𝗦𝗶𝗹𝗶𝗰𝗼𝗻 𝗡𝗶𝘁𝗿𝗶𝗱𝗲 𝗪𝗮𝘃𝗲𝗴𝘂𝗶𝗱𝗲𝘀 The monolithic integration of quantum dot lasers with silicon nitride waveguides brings scalable on-chip light sources one step closer to reality for silicon photonics. 𝗪𝗵𝘆 𝗶𝘁 𝗺𝗮𝘁𝘁𝗲𝗿𝘀 ‣ Quantum dot lasers offer superior temperature stability and low threshold currents, making them ideal for scalable, on-chip light sources. ‣ The integration process using in-pocket molecular beam epitaxy (MBE) and etched-facet mirrors resulted in a minimum threshold current of 0.88 mA with clear lasing at 1300 nm. ‣ On-chip coupling of quantum dot lasers to SiN waveguides demonstrates promising performance with waveguide-coupled light output measured using lensed fibers. 𝗥𝗲𝗮𝗱 𝘁𝗵𝗲 𝗳𝘂𝗹𝗹 𝗮𝗿𝘁𝗶𝗰𝗹𝗲: https://lnkd.in/gsu5Kv_E #QuantumDotLasers #SiliconNitride #OnChipLasers #PhotonicCircuits #III_VLasers
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Revolutionizing far-infrared thermal emission! A groundbreaking study published in IEEE Photonics Journal demonstrates how metallic nanotube arrays (MeNTAs) integrated into thermal emitters enhance luminous efficiency, providing precise wavelength filtering. These innovations show promise in medical therapies, semiconductor technology, and energy applications. Explore the potential of MeNTAs for effective thermal emission. Read more: https://lnkd.in/dV4piH3W #Photonics #InfraredTech #Nanotechnology #BiomedicalApplications #Innovation
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