Leibniz Institute for Solid State and Materials Research hat dies direkt geteilt
Group Leader, Surface-Functionalized Materials, Atomic Layer Deposition, PVD, Advanced Materials
First-Ever ALD Growth of Elemental #Bismuth. We are excited to share our latest work, published in Angewandte Chemie, where we successfully demonstrated the first reported growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (#ALDep). Using Bi(NMe₂)₃ as the precursor and Sb(SiMe₃)₃ as the co-reactant, we achieved Bi deposition at a remarkably low temperature of 100 °C, with a growth per cycle of 0.31-0.34 Å/cycle. Initial island growth transitioned to full surface coverage between 2000-2500 ALD cycles. Key findings include: * A shift in preferential growth orientation from (012) to (003) with increasing thickness (XRD). ** Metallic Bi confirmation with minimal surface oxidation (XPS). *** Semimetallic transport behavior, with temperature-dependent carrier-type transition (sheet resistance). This work paves the way for low-temperature ALD of Bi, opening opportunities in nanoelectronics and topological materials research. Special thanks to all co-authors for their invaluable contributions in making this possible! Jorge Luis Vazquez Arce Alessio Amoroso Nicolás Pérez Rodríguez Jaroslav Charvot Dr. Dominik Naglav-Hansen Jun Yang Dr. Sebastian Lehmann Dr. Angelika Wrzesińska-Lashkova Ralf Tonner-Zech Annalisa Acquesta Yana Vaynzof Anjana Devi Read the full study here: